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SSM6N35FU

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The SSM6N35FU from Toshiba is a MOSFET with Continous Drain Current 0.18 A, Drain Source Resistance 1500 to 20000 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM6N35FU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N35FU
  • Manufacturer
    Toshiba
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.18 A
  • Drain Source Resistance
    1500 to 20000 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Power Dissipation
    0.2 W
  • Industry
    Aerospace, Industrial, Medical, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    High-Speed Switching Applications, Analog Switching Applications

Technical Documents
View details on the manufacturer's website
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