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SSM6N58NU

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The SSM6N58NU from Toshiba is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 67 to 180 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM6N58NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N58NU
  • Manufacturer
    Toshiba
  • Description
    30 V, 1.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    67 to 180 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    1.8 nC
  • Power Dissipation
    2 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN6
  • Applications
    Power Management Switches, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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