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SSM6N7002BFE

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SSM6N7002BFE Image

The SSM6N7002BFE from Toshiba is a MOSFET with Continous Drain Current 0.2 A, Drain Source Resistance 1620 to 3300 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 3.1 V. Tags: Surface Mount. More details for SSM6N7002BFE can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N7002BFE
  • Manufacturer
    Toshiba
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.2 A
  • Drain Source Resistance
    1620 to 3300 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 3.1 V
  • Power Dissipation
    0.15 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    High-Speed Switching Applications, Analog Switch Applications

Technical Documents
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