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SSM6N813R

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SSM6N813R Image

The SSM6N813R from Toshiba is a MOSFET with Continous Drain Current 3.5 A, Drain Source Resistance 88 to 154 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for SSM6N813R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N813R
  • Manufacturer
    Toshiba
  • Description
    100 V, 3.6 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    3.5 A
  • Drain Source Resistance
    88 to 154 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    3.6 nC
  • Power Dissipation
    2.5 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP6F
  • Applications
    Power Management Switches

Technical Documents
View details on the manufacturer's website
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