1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. SSM6N815R

SSM6N815R

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

SSM6N815R Image

The SSM6N815R from Toshiba is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 84 to 180 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for SSM6N815R can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM6N815R
  • Manufacturer
    Toshiba
  • Description
    100 V, 3.1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    84 to 180 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    3.1 nC
  • Power Dissipation
    1.8 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP6F
  • Applications
    Power Management Switches

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products