1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. SSM6P39TU

SSM6P39TU

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

SSM6P39TU Image

The SSM6P39TU from Toshiba is a MOSFET with Continous Drain Current -1.5 A, Drain Source Resistance 160 to 430 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for SSM6P39TU can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM6P39TU
  • Manufacturer
    Toshiba
  • Description
    -20 V, 6.4 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -1.5 A
  • Drain Source Resistance
    160 to 430 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    6.4 nC
  • Power Dissipation
    0.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UF6
  • Applications
    Power Management Switch Applications, High-Speed Switching Applications

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products