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SSM6P816R

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SSM6P816R Image

The SSM6P816R from Toshiba is a MOSFET with Continous Drain Current -1 A, Drain Source Resistance 23 to 52.3 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for SSM6P816R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6P816R
  • Manufacturer
    Toshiba
  • Description
    -20 V, 16.6 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -1 A
  • Drain Source Resistance
    23 to 52.3 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    16.6 nC
  • Power Dissipation
    1 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP6F
  • Applications
    Power Management Switches

Technical Documents
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