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TK10P50W

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The TK10P50W from Toshiba is a MOSFET with Continous Drain Current 9.7 A, Drain Source Resistance 327 to 430 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.7 to 3.7 V. Tags: Surface Mount. More details for TK10P50W can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK10P50W
  • Manufacturer
    Toshiba
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.7 A
  • Drain Source Resistance
    327 to 430 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.7 to 3.7 V
  • Gate Charge
    20 nC
  • Power Dissipation
    80 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching Voltage Regulators

Technical Documents
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