The TK11A45D from Toshiba is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 500 to 620 milliohm, Drain Source Breakdown Voltage 450 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TK11A45D can be seen below.