1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TK11A65W

TK11A65W

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TK11A65W Image

The TK11A65W from Toshiba is a MOSFET with Continous Drain Current 11.1 A, Drain Source Resistance 330 to 390 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for TK11A65W can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TK11A65W
  • Manufacturer
    Toshiba
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11.1 A
  • Drain Source Resistance
    330 to 390 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    25 nC
  • Power Dissipation
    35 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products