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TK125V65Z

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The TK125V65Z from Toshiba is a MOSFET with Continous Drain Current 24 A, Drain Source Resistance 105 to 125 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Surface Mount. More details for TK125V65Z can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK125V65Z
  • Manufacturer
    Toshiba
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    24 A
  • Drain Source Resistance
    105 to 125 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    40 nC
  • Power Dissipation
    190 W
  • Temperature operating range
    150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN8x8
  • Applications
    Switching Power Supplies

Technical Documents
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