1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TK17A65W5

TK17A65W5

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TK17A65W5 Image

The TK17A65W5 from Toshiba is a MOSFET with Continous Drain Current 17.3 A, Drain Source Resistance 190 to 230 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4.5 V. Tags: Through Hole. More details for TK17A65W5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TK17A65W5
  • Manufacturer
    Toshiba
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17.3 A
  • Drain Source Resistance
    190 to 230 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4.5 V
  • Gate Charge
    50 nC
  • Power Dissipation
    45 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products