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TK1R4S04PB

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TK1R4S04PB Image

The TK1R4S04PB from Toshiba is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 1.1 to 1.9 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3 V. Tags: Surface Mount. More details for TK1R4S04PB can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK1R4S04PB
  • Manufacturer
    Toshiba
  • Description
    40 V, 103 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    1.1 to 1.9 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 3 V
  • Gate Charge
    103 nC
  • Power Dissipation
    180 W
  • Industry
    Commercial, Industrial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators

Technical Documents
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