1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TK3R3E08QM

TK3R3E08QM

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TK3R3E08QM Image

The TK3R3E08QM from Toshiba is a MOSFET with Continous Drain Current 200 A, Drain Source Resistance 2.6 to 4.2 Milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for TK3R3E08QM can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TK3R3E08QM
  • Manufacturer
    Toshiba
  • Description
    80 V, 110 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    200 A
  • Drain Source Resistance
    2.6 to 4.2 Milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    110 nC
  • Power Dissipation
    230 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products