1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TK46E08N1

TK46E08N1

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TK46E08N1 Image

The TK46E08N1 from Toshiba is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 6.9 to 8.4 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TK46E08N1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TK46E08N1
  • Manufacturer
    Toshiba
  • Description
    80 V, 37 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    6.9 to 8.4 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    37 nC
  • Power Dissipation
    103 W
  • Industry
    Aerospace, Industrial, Medical, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products