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TK4A80E

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TK4A80E Image

The TK4A80E from Toshiba is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2800 to 3500 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4 V. Tags: Through Hole. More details for TK4A80E can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK4A80E
  • Manufacturer
    Toshiba
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    2800 to 3500 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4 V
  • Gate Charge
    15 nC
  • Power Dissipation
    35 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
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