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TK4K1A60F

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The TK4K1A60F from Toshiba is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 3380 to 4100 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TK4K1A60F can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK4K1A60F
  • Manufacturer
    Toshiba
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    3380 to 4100 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    8 nC
  • Power Dissipation
    30 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
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