1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TK55S10N1

TK55S10N1

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TK55S10N1 Image

The TK55S10N1 from Toshiba is a MOSFET with Continous Drain Current 55 A, Drain Source Resistance 5.5 to 6.5 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TK55S10N1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TK55S10N1
  • Manufacturer
    Toshiba
  • Description
    100 V, 49 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    55 A
  • Drain Source Resistance
    5.5 to 6.5 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    49 nC
  • Power Dissipation
    157 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Automotive, Motor Drivers, Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products