The TK560A65Y from Toshiba is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 43 to 56 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for TK560A65Y can be seen below.
