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TK60S06K3L

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The TK60S06K3L from Toshiba is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 6.4 to 12.3 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3 V. Tags: Surface Mount. More details for TK60S06K3L can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK60S06K3L
  • Manufacturer
    Toshiba
  • Description
    60 V, 60 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    6.4 to 12.3 Milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 3 V
  • Gate Charge
    60 nC
  • Power Dissipation
    88 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators

Technical Documents
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