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TK65E10N1

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The TK65E10N1 from Toshiba is a MOSFET with Continous Drain Current 148 A, Drain Source Resistance 4 to 4.8 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TK65E10N1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK65E10N1
  • Manufacturer
    Toshiba
  • Description
    100 V, 81 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    148 A
  • Drain Source Resistance
    4 to 4.8 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    81 nC
  • Power Dissipation
    192 W
  • Industry
    Aerospace, Industrial, Medical, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
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