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TK65S04N1L

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The TK65S04N1L from Toshiba is a MOSFET with Continous Drain Current 65 A, Drain Source Resistance 3.3 to 7.8 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for TK65S04N1L can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK65S04N1L
  • Manufacturer
    Toshiba
  • Description
    40 V, 39 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    65 A
  • Drain Source Resistance
    3.3 to 7.8 Milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    39 nC
  • Power Dissipation
    107 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Automotive, Motor Drivers, Switching Voltage Regulators

Technical Documents
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