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TK6Q65W

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TK6Q65W Image

The TK6Q65W from Toshiba is a MOSFET with Continous Drain Current 5.8 A, Drain Source Resistance 890 to 1050 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for TK6Q65W can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK6Q65W
  • Manufacturer
    Toshiba
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.8 A
  • Drain Source Resistance
    890 to 1050 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    11 nC
  • Power Dissipation
    60 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    IPAK
  • Applications
    Switching Voltage Regulators

Technical Documents
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