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TK6R4E10PL

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The TK6R4E10PL from Toshiba is a MOSFET with Continous Drain Current 112 A, Drain Source Resistance 5.5 to 9.7 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Through Hole. More details for TK6R4E10PL can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK6R4E10PL
  • Manufacturer
    Toshiba
  • Description
    100 V, 58 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    112 A
  • Drain Source Resistance
    5.5 to 9.7 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.5 to 2.5 V
  • Gate Charge
    58 nC
  • Power Dissipation
    152 W
  • Industry
    Aerospace, Industrial, Medical, Military
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators, Motor Drivers

Technical Documents
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