The TK8A55DA from Toshiba is a MOSFET with Continous Drain Current 7.5 A, Drain Source Resistance 900 to 1070 Milliohm, Drain Source Breakdown Voltage 550 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TK8A55DA can be seen below.