The TK8A65W from Toshiba is a MOSFET with Continous Drain Current 7.8 A, Drain Source Resistance 530 to 650 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Through Hole. More details for TK8A65W can be seen below.