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TK8P65W

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TK8P65W Image

The TK8P65W from Toshiba is a MOSFET with Continous Drain Current 7.8 A, Drain Source Resistance 550 to 670 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for TK8P65W can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK8P65W
  • Manufacturer
    Toshiba
  • Description
    650 V, 16 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.8 A
  • Drain Source Resistance
    550 to 670 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    16 nC
  • Power Dissipation
    80 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching Voltage Regulators

Technical Documents
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