The TK90S06N1L from Toshiba is a MOSFET with Continous Drain Current 90 A, Drain Source Resistance 2.7 to 5.2 Milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.5 to 2.5 V. Tags: Surface Mount. More details for TK90S06N1L can be seen below.