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TK9A60D

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TK9A60D Image

The TK9A60D from Toshiba is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 670 to 830 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TK9A60D can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK9A60D
  • Manufacturer
    Toshiba
  • Description
    600 V, 24 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    670 to 830 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    24 nC
  • Power Dissipation
    45 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Regulator Applications

Technical Documents
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