1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TK9A90E

TK9A90E

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TK9A90E Image

The TK9A90E from Toshiba is a MOSFET with Continous Drain Current 9 A, Drain Source Resistance 1000 to 1300 Milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4 V. Tags: Through Hole. More details for TK9A90E can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TK9A90E
  • Manufacturer
    Toshiba
  • Description
    900 V, 46 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9 A
  • Drain Source Resistance
    1000 to 1300 Milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4 V
  • Gate Charge
    46 nC
  • Power Dissipation
    50 W
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products