TKR74F04PB

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The TKR74F04PB from Toshiba is a MOSFET with Continous Drain Current 250 A, Drain Source Resistance 0.6 to 9.8 Milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3 V. Tags: Surface Mount. More details for TKR74F04PB can be seen below.

Product Specifications

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Product Details

Part Number
TKR74F04PB
Manufacturer
Toshiba
Description
40 V, 227 nC, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

250 A
Drain Source Resistance

0.6 to 9.8 Milliohm
Drain Source Breakdown Voltage

40 V
Gate Source Voltage

-20 to 20 V
Gate Source Threshold Voltage

2 to 3 V
Gate Charge

227 nC
Power Dissipation

375 W
Qualification

AEC-Q101
RoHS Compliant

Yes
Package Type

Surface Mount
Package

TO-220SM
Applications

Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators