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TPC8129

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TPC8129 Image

The TPC8129 from Toshiba is a MOSFET with Continous Drain Current -9 A, Drain Source Resistance 17 to 28 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 20 V, Gate Source Threshold Voltage -2 to -0.8 V. Tags: Surface Mount. More details for TPC8129 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPC8129
  • Manufacturer
    Toshiba
  • Description
    -30 V, 39 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9 A
  • Drain Source Resistance
    17 to 28 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 20 V
  • Gate Source Threshold Voltage
    -2 to -0.8 V
  • Gate Charge
    39 nC
  • Power Dissipation
    1.9 W
  • Industry
    Industrial, Military, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Lithium-Ion Secondary Batteries, Power Management Switches

Technical Documents
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