The TPH6400ENH from Toshiba is a MOSFET with Continous Drain Current 21 A, Drain Source Resistance 54 to 64 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPH6400ENH can be seen below.