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TPH8R903NL

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The TPH8R903NL from Toshiba is a MOSFET with Continous Drain Current 38 A, Drain Source Resistance 7.6 to 12.7 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.3 V. Tags: Surface Mount. More details for TPH8R903NL can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPH8R903NL
  • Manufacturer
    Toshiba
  • Description
    30 V, 9.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    38 A
  • Drain Source Resistance
    7.6 to 12.7 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.3 V
  • Gate Charge
    9.8 nC
  • Power Dissipation
    24 W
  • Industry
    Commercial, Industrial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    Switching Voltage Regulators, DC-DC Converters

Technical Documents
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