The TPH9R00CQH from Toshiba is an N-Channel Enhancement Mode Silicon MOSFET. It has a drain-source breakdown voltage of over 150 V and a drain-source resistance of 7.9 milli-ohms. This MOSFET has a gate threshold voltage of up to 4.3 V and power dissipation of up to 210 W. It has a continuous drain current of less than 64 A and a pulsed drain current of up to 320 A. This silicon MOSFET offers a high-speed switching operation that is particularly useful for switching voltage regulators.
The TPH9R00CQH is available in a surface-mount package that measures 5 x 6 mm and is ideal for use in high-efficiency DC-DC converters, high-speed switching voltage regulators, and motor driver applications.
