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TPN2010FNH

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The TPN2010FNH from Toshiba is a MOSFET with Continous Drain Current 9.9 A, Drain Source Resistance 168 to 198 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPN2010FNH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPN2010FNH
  • Manufacturer
    Toshiba
  • Description
    250 V, 7 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.9 A
  • Drain Source Resistance
    168 to 198 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    7 nC
  • Power Dissipation
    39 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators

Technical Documents
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