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TPW2900ENH

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TPW2900ENH Image

The TPW2900ENH from Toshiba is a MOSFET with Continous Drain Current 39 A, Drain Source Resistance 24 to 29 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for TPW2900ENH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TPW2900ENH
  • Manufacturer
    Toshiba
  • Description
    200 V, 22 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    39 A
  • Drain Source Resistance
    24 to 29 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    22 nC
  • Power Dissipation
    142 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DSOP Advance
  • Applications
    High-Efficiency DC-DC Converters, Switching Voltage Regulators

Technical Documents
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