The TW027N65C from Toshiba is a MOSFET with Continous Drain Current 58 A, Drain Source Resistance 27 to 37 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for TW027N65C can be seen below.