1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. TW027N65C

TW027N65C

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

TW027N65C Image

The TW027N65C from Toshiba is a MOSFET with Continous Drain Current 58 A, Drain Source Resistance 27 to 37 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for TW027N65C can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    TW027N65C
  • Manufacturer
    Toshiba
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    58 A
  • Drain Source Resistance
    27 to 37 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    65 nC
  • Power Dissipation
    156 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Switching Voltage Regulators

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products