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XPH4R10ANB

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XPH4R10ANB Image

The XPH4R10ANB from Toshiba is a MOSFET with Continous Drain Current 70 A, Drain Source Resistance 3.4 to 6.2 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 3.5 V. Tags: Surface Mount. More details for XPH4R10ANB can be seen below.

Product Specifications

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Product Details

  • Part Number
    XPH4R10ANB
  • Manufacturer
    Toshiba
  • Description
    100 V, 75 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    70 A
  • Drain Source Resistance
    3.4 to 6.2 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 3.5 V
  • Gate Charge
    75 nC
  • Power Dissipation
    170 W
  • Industry
    Industrial, Military, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP Advance
  • Applications
    Automotive, Motor Drivers, Switching Voltage Regulators

Technical Documents
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