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XPN9R614MC

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XPN9R614MC Image

The XPN9R614MC from Toshiba is a MOSFET with Continous Drain Current -40 A, Drain Source Resistance 7.4 to 13.4 Milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 10 V, Gate Source Threshold Voltage -2.1 to -1 V. Tags: Surface Mount. More details for XPN9R614MC can be seen below.

Product Specifications

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Product Details

  • Part Number
    XPN9R614MC
  • Manufacturer
    Toshiba
  • Description
    -40 V, 64 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -40 A
  • Drain Source Resistance
    7.4 to 13.4 Milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Source Threshold Voltage
    -2.1 to -1 V
  • Gate Charge
    64 nC
  • Power Dissipation
    100 W
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSON Advance
  • Applications
    Automotive, Motor Drivers, DC-DC Converters, Switching Voltage Regulators

Technical Documents
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