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2N6849

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2N6849 Image

The 2N6849 from TT Electronics is a MOSFET with Continous Drain Current -5.8 A, Drain Source Resistance 300 to 540 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -5 to -1 V. Tags: Through Hole. More details for 2N6849 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2N6849
  • Manufacturer
    TT Electronics
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.8 A
  • Drain Source Resistance
    300 to 540 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -5 to -1 V
  • Power Dissipation
    20.833 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Applications
    Designed For Switching, Power Supply, Motor Control and Amplifier Applications, Aerospace

Technical Documents
View details on the manufacturer's website
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