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BFC61

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The BFC61 from TT Electronics is a MOSFET with Continous Drain Current 3.6 A, Drain Source Resistance 4000 milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for BFC61 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BFC61
  • Manufacturer
    TT Electronics
  • Description
    1000 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.6 A
  • Drain Source Resistance
    4000 milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    35 to 55 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220
  • Applications
    Various Aerospace and Space

Technical Documents
View details on the manufacturer's website
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