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SIMFSZN2106M1

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SIMFSZN2106M1 Image

The SIMFSZN2106M1 from TT Electronics is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 4000 to 6000 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.25 to 2.84 V. Tags: Through Hole. More details for SIMFSZN2106M1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SIMFSZN2106M1
  • Manufacturer
    TT Electronics
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    4000 to 6000 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.25 to 2.84 V
  • Power Dissipation
    8.33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO–257AA
  • Applications
    Various Aerospace and Space

Technical Documents
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