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UN0309N3R2-T52

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The UN0309N3R2-T52 from UN Semiconductor is a MOSFET with Continous Drain Current 90 A, Drain Source Resistance 3.2 to 7.0 milli-ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5. Tags: Surface Mount. More details for UN0309N3R2-T52 can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN0309N3R2-T52
  • Manufacturer
    UN Semiconductor
  • Description
    30 V, 90 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    90 A
  • Drain Source Resistance
    3.2 to 7.0 milli-ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5
  • Gate Charge
    42 nC
  • Switching Speed
    13 to 43 ns
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    PWM Application, Load Switch, Power Management
  • Note
    Input Capacitance :- 2300 pF

Technical Documents
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