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UN0405N2R4-PD56

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The UN0405N2R4-PD56 from UN Semiconductor is a MOSFET with Continous Drain Current 59 A, Drain Source Resistance 2.4 to 5.2 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for UN0405N2R4-PD56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN0405N2R4-PD56
  • Manufacturer
    UN Semiconductor
  • Description
    40 V, 59 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    59 A
  • Drain Source Resistance
    2.4 to 5.2 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5*6-8L
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