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UN0415N1R2-PD56

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The UN0415N1R2-PD56 from UN Semiconductor is a MOSFET with Continous Drain Current 156 A, Drain Source Resistance 1.2 to 2.5 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for UN0415N1R2-PD56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN0415N1R2-PD56
  • Manufacturer
    UN Semiconductor
  • Description
    40 V, 156 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    156 A
  • Drain Source Resistance
    1.2 to 2.5 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    125 nC
  • Switching Speed
    23.6 to 76.2 ns
  • Power Dissipation
    33 to 83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5*6-8L
  • Applications
    DC/DC Converter, Battery Management System, Industrial and Motor Drive applications, Synchronous rectifier applications, Half-bridge and full-bridge topologies
  • Note
    Input Capacitance :- 9247 pF

Technical Documents
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