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UN0419N1R7-PD56

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The UN0419N1R7-PD56 from UN Semiconductor is a MOSFET with Continous Drain Current 190 A, Drain Source Resistance 1.7 to 3.4 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 5.0 V. Tags: Surface Mount. More details for UN0419N1R7-PD56 can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN0419N1R7-PD56
  • Manufacturer
    UN Semiconductor
  • Description
    40 V, 190 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    190 A
  • Drain Source Resistance
    1.7 to 3.4 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 5.0 V
  • Gate Charge
    110 nC
  • Switching Speed
    15 to 51 ns
  • Power Dissipation
    94 to 147 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN5*6-8L
  • Applications
    DC/DC Converter, Battery Management System, Industrial and Motor Drive applications, Synchronous rectifier applications, Half-bridge and full-bridge topologies
  • Note
    Input Capacitance :- 4511 pF

Technical Documents
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