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UN200DN36TE

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The UN200DN36TE from UN Semiconductor is a MOSFET with Continous Drain Current 0.63 A, Drain Source Resistance 270 to 450 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1.1 V. Tags: Surface Mount. More details for UN200DN36TE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN200DN36TE
  • Manufacturer
    UN Semiconductor
  • Description
    20 V, 0.63 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.63 A
  • Drain Source Resistance
    270 to 450 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.35 to 1.1 V
  • Gate Charge
    1 nC
  • Switching Speed
    4.8 to 17.3 ns
  • Power Dissipation
    0.21 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    Load Switch for Portable Devices, Voltage Controlled Small Signal Switch
  • Note
    Input Capacitance :- 79 pF

Technical Documents
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