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UN200N26TE

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The UN200N26TE from UN Semiconductor is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 11.8 to 19 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.3 V. Tags: Surface Mount. More details for UN200N26TE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UN200N26TE
  • Manufacturer
    UN Semiconductor
  • Description
    20 V, 7 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    11.8 to 19 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.3 V
  • Gate Charge
    7.0 nC
  • Switching Speed
    3.0 to 28 ns
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Applications
    Motor/Body Load Control, Load Switch, DC-DC Converters
  • Note
    Input Capacitance :- 782 pF

Technical Documents
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