The UN200N52TE from UN Semiconductor is a MOSFET with Continous Drain Current 0.5 A, Drain Source Resistance 190 to 800 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.35 to 1.1 V. Tags: Surface Mount. More details for UN200N52TE can be seen below.